JPH0516399B2 - - Google Patents
Info
- Publication number
- JPH0516399B2 JPH0516399B2 JP7779888A JP7779888A JPH0516399B2 JP H0516399 B2 JPH0516399 B2 JP H0516399B2 JP 7779888 A JP7779888 A JP 7779888A JP 7779888 A JP7779888 A JP 7779888A JP H0516399 B2 JPH0516399 B2 JP H0516399B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- evaporation
- evaporation source
- growth chamber
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001704 evaporation Methods 0.000 claims description 89
- 230000008020 evaporation Effects 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 19
- 229910021478 group 5 element Inorganic materials 0.000 claims description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63077798A JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
| DE68926577T DE68926577T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
| EP89105248A EP0335267B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
| EP92117113A EP0529687B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
| DE68916457T DE68916457T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie. |
| TW080105276A TW202485B (en]) | 1988-03-30 | 1989-03-24 | |
| US07/329,313 US4944246A (en) | 1988-03-30 | 1989-03-27 | Molecular beam epitaxy apparatus |
| CA000594977A CA1333038C (en) | 1988-03-30 | 1989-03-29 | Molecular beam epitaxy apparatus |
| KR1019890004152A KR930010750B1 (ko) | 1988-03-30 | 1989-03-30 | 분자선 에피택시 장치 |
| CA000616594A CA1333039C (en) | 1988-03-30 | 1993-03-30 | Molecular beam epitaxy apparatus |
| KR1019930013044A KR930010751B1 (ko) | 1988-03-30 | 1993-07-09 | 분자선 에피택시 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63077798A JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01249692A JPH01249692A (ja) | 1989-10-04 |
| JPH0516399B2 true JPH0516399B2 (en]) | 1993-03-04 |
Family
ID=13644020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63077798A Granted JPH01249692A (ja) | 1988-03-30 | 1988-03-30 | 分子線エピタキシー装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01249692A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111304623A (zh) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | 一种超高真空进样与样品处理两用系统及处理方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2323209A (en) * | 1997-03-13 | 1998-09-16 | Sharp Kk | Molecular beam epitaxy apparatus and method |
| US12080571B2 (en) * | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
-
1988
- 1988-03-30 JP JP63077798A patent/JPH01249692A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111304623A (zh) * | 2020-02-24 | 2020-06-19 | 西安交通大学 | 一种超高真空进样与样品处理两用系统及处理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01249692A (ja) | 1989-10-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930010751B1 (ko) | 분자선 에피택시 장치 | |
| TWI819206B (zh) | 成膜裝置及成膜方法 | |
| KR19980016216A (ko) | 펄스 레이저 증착장치용 멀티 타겟 구동장치 | |
| US4100879A (en) | Device for epitaxial growing of semiconductor periodic structures from gas phase | |
| JPH01305894A (ja) | 薄膜結晶成長装置および成長方法 | |
| JPH0516399B2 (en]) | ||
| JPH057252Y2 (en]) | ||
| JPH0527501Y2 (en]) | ||
| JP2550870B2 (ja) | テルル化水銀カドミウム分子線エピタキシャル成長における組成及びドーピング濃度制御方法 | |
| JPH0426762A (ja) | 真空容器における回転導入機構 | |
| JPH057249Y2 (en]) | ||
| JPH04348022A (ja) | 分子線エピタキシー用セル | |
| JPH05345974A (ja) | 蒸着装置 | |
| JPS62115820A (ja) | 分子線結晶成長装置 | |
| JPS6396928A (ja) | 蒸着装置 | |
| JPH057251Y2 (en]) | ||
| JPH04111730U (ja) | 分子線エピタキシイ装置 | |
| RU1484191C (ru) | Способ получени монокристаллических пленок полупроводниковых материалов | |
| JPS61141697A (ja) | 分子線結晶成長装置用分子線源 | |
| JPS61190920A (ja) | 分子線結晶成長装置 | |
| JP3495910B2 (ja) | 液相エピタキシャル成長装置 | |
| JP2820471B2 (ja) | 薄膜形成装置 | |
| JPH08119791A (ja) | 基板上に層を形成するための方法及び装置 | |
| JPH0375293A (ja) | 分子線エピタキシー用セル | |
| JP2000216091A (ja) | 半導体素子の製造装置および製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |